Integrated strained stacked nanosheet FET

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United States of America Patent

PATENT NO 9997618
SERIAL NO

15476164

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Abstract

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Transistors and methods of forming the same include forming a fin of alternating layers of a channel material and a sacrificial material. Stress liners are formed in contact with both ends of the fin. The stress liners exert a stress on the fin. The sacrificial material is etched away from the fin, such that the layers of the channel material are suspended between the stress liners. A gate stack is formed over and around the suspended layers of channel material.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Divakaruni, Ramachandra Ossining, US 277 5672
Li, Juntao Cohoes, US 578 3153
Miao, Xin Guilderland, US 355 2275

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