Semiconductor device comprising a gate formed from a gate ring

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United States of America Patent

PATENT NO 10084062
APP PUB NO 20170323961A1
SERIAL NO

15657401

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Abstract

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In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.

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Patent Owner(s)

  • HEWLETT-PACKARD COMPANY

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chia, Leong Yap Singapore, SG 14 83
Ge, Ning Palo Alto, US 239 632
Lee, Pin Chin Singapore, SG 3 6
Rando, Jose Jehrome Singapore, SG 9 15

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