Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation

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United States of America Patent

PATENT NO 10008618
SERIAL NO

15658790

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Abstract

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A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haight, Richard A Mahopac, US 71 404
Hannon, James B Lake Lincolndale, US 51 435
Oida, Satoshi Yorktown Heights, US 21 144

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