ALUMINUM PRECURSORS FOR THIN-FILM DEPOSITION, PREPARATION METHOD AND USE THEREOF

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

15517651

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R1, R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom, C1˜C6 alkyl, halo-C1˜C6 alkyl, C2˜C5 alkenyl, halo-C2˜C5 alkenyl, C3˜C10 cycloalkyl, halo-C3˜C10 cycloalkyl, C6˜C10 aryl, halo-C6˜C10 aryl or —Si(R0)3, and wherein R0 is C1˜C6 alkyl or halo-C1˜C6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029
JIANGNAN UNIVERSITYNO 1800 ROAD 214122 JIANGSU LIHU BINHU DISTRICT CITY OF WUXI PROVINCE WUXI CITY JIANGSU PROVINCE 214122

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DING, Yuqiang Wuxi, CN 4 2
MIAO, Hongyan Wuxi, CN 1 0
WANG, Dawei Wuxi, CN 69 188
XIANG, Jinjuan Beijing, CN 6 6
XU, Chongying Bear, DE 151 3525
YANG, Shuyan Wuxi, CN 1 0
ZHAO, Chao Kessel-lo, BE 100 372

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation