3D integration using Al—Ge eutectic bond interconnect

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United States of America Patent

PATENT NO 10651151
APP PUB NO 20170330863A1
SERIAL NO

15663242

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Abstract

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A method includes aligning a germanium feature on a first CMOS wafer with an aluminum feature on a second CMOS wafer. The aluminum feature and the germanium feature are pressed together. A eutectic bond is formed connecting the aluminum feature to the germanium feature. The eutectic bond has a melting point which is lower than the melting point of aluminum and the melting point of germanium.

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Patent Owner(s)

  • INVENSENSE, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maghsoudnia, Mozafar San Jose, US 9 40
Smeys, Peter San Jose, US 100 957

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