ULTRALOW-ENERGY ELECTRO-OPTICAL LOGIC AND NxN SWITCHING BY RESONANT ON-CHIP NANOBEAM WAVEGUIDE NETWORKS
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United States of America Patent
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Nov 23, 2017
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May 18, 2017
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May 18, 2016
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Abstract
An ultralow-energy electro-optical 2×2 cross-bar switch comprises an identical pair of semiconductor nanobeams that are incorporated in the central arms of a waveguided Mach-Zehnder interferometer. Each nanobeam includes a one dimensional “lattice” of holes along the nanobeam axis that defines a resonant cavity whose fundamental mode is the operating wavelength of the switch. A localized, lateral lengthwise extending portion of the semiconductor nanobeam is doped P type, while the other lateral half of the nanobeam wing is doped N type, forming a P-N junction in the body. Application of an electric potential across the P-N junction alters the effective index of refraction of the lengthwise extending portion and controls both the transmission and reflection of an incoming optical signal at the operating wavelength of the switch through the semiconductor nanobeam. Constructive and destructive interference of component signals within the interferometer controls the spatial routing of the incident light.
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