Semiconductor memory apparatus and operating method

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United States of America Patent

PATENT NO 9997211
APP PUB NO 20170337950A1
SERIAL NO

15378308

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Abstract

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A semiconductor memory apparatus, including a first mat which includes a first bit line and a first word line and a second mat which includes a second bit line and a second word line, includes a first bit line driving circuit configured to enable the first bit line in response to a first bit line select signal and a first machine bit line select signal; a second bit line driving circuit configured to enable the second bit line in response to a second bit line select signal and a second machine bit line select signal; a column-related decoding circuit configured to selectively enable the first and second bit line select signals in response to a column address; and a state machine configured to selectively enable the first and second machine bit line select signals in response to the column address.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Chang Yong Gyeonggi-do, KR 18 121
Cheon, Jun Ho Gyeonggi-do, KR 18 42

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