Method of forming a P-type layer for a light emitting device

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United States of America Patent

PATENT NO 10749070
APP PUB NO 20170338373A1
SERIAL NO

15592658

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Abstract

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In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

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Patent Owner(s)

Patent OwnerAddress
LUMILEDS LLC370 WEST TRIMBLE ROAD SAN JOSE CA 95131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deb, Parijat San Jose, US 24 60
Nelson, Erik Charles San Jose, US 13 50
Wildeson, Isaac San Jose, US 41 71

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