Laser diode chip

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10027090
APP PUB NO 20170338626A1
SERIAL NO

15498751

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Abstract

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A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. The single quantum well structure includes a quantum well layer, which is arranged between a first barrier layer and a second barrier layer, wherein the first barrier layer faces the n-type semiconductor region, and the second barrier layer faces the p-type semiconductor region. An electronic bandgap EQW of the quantum well layer is smaller than an electronic bandgap EB1 of the first barrier layer and smaller than an electronic bandgap EB2 of the second barrier layer, and the electronic bandgap EB1 of the first barrier layer is larger than the electronic bandgap EB2 of the second barrier layer.

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Patent Owner(s)

  • OSRAM OPTO SEMICONDUCTORS GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eichler, Christoph Donaustauf, DE 81 642
Wurm, Teresa Mintraching, DE 5 7

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