Avalanche-rugged silicon carbide (SiC) power device

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United States of America Patent

PATENT NO 10026805
SERIAL NO

15677400

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Abstract

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In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device. The termination region can have a first transition zone and a second transition zone. The first transition zone can be disposed between a first zone and a second zone, and the second zone can have a top surface lower in depth than a depth of a top surface of the first zone. The first transition zone can have a recess, and the second transition zone can be disposed between the second zone and a third zone.

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Patent Owner(s)

  • FARICHILD SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Konstantinov, Andrei Sollentuna, SE 50 523

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