Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11075264
APP PUB NO 20170345891A1
SERIAL NO

15168310

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Abstract

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Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region.

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Patent Owner(s)

  • CREE, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lichtenwalner, Daniel J Raleigh, US 16 57
Pala, Vipindas Morrisville, US 53 300
Suvorov, Alexander V Durham, US 15 493
Van, Brunt Edward Robert Raleigh, US 45 145
Zhang, Qingchun Cary, US 98 1734

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