Rare-Earth Metal Oxide Resistive Random Access Non-Volatile Memory Device

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United States of America Patent

SERIAL NO

15165903

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Abstract

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A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001
KATHOLIEKE UNIVERSITEIT LEUVEN KU LEUVEN R&DWAAISTRAAT 6 BOX 5105 LEUVEN 3000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chao-Yang Leuven, BE 23 164
Fantini, Andrea Leuven, BE 4 24
Goux, Ludovic Hannuit, BE 20 272

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