MANUFACTURING METHOD OF TFT BACKPLANE AND TFT BACKPLANE

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United States of America Patent

SERIAL NO

15120748

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Abstract

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The present invention provides a manufacture method of a TFT backplate and a TFT backplate. By utilizing the oxide semiconductor to manufacture the switch TFT, and utilizing the advantages of rapid switch and lower leakage current of the oxide semiconductor, the switch speed of the switch TFT is raised and the leakage current is lowered; by utilizing the polysilicon to manufacture the drive TFT, and utilizing the properties of higher electron mobility and the uniform grain of the polysilicon, the electron mobility and the current output consistency of the drive TFT is promoted. These are beneficial for the promotion of the light uniformity of the OLED element.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD518132 9-2 GUANGMING ROAD GUANGMING NEW DISTRICT GUANGDONG SHENZHEN SHENZHEN CITY GUANGDONG PROVINCE 518132

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Yuanjun Shenzhen City, CN 39 75
Zhang, Xiaoxing Shenzhen City, CN 46 168
Zhou, Xingyu Shenzhen City, CN 65 147

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