Solid state ephemeral electric potential and electric field sensor

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United States of America Patent

PATENT NO 10024900
APP PUB NO 20170356942A1
SERIAL NO

15177798

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Abstract

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Systems, methods, and devices of the various embodiments provide a field effect transistor (FET) that controls equilibrium by reversing the effects of leakage currents affecting the gate response of the FET by using an equilibrium pump electrode. The equilibrium reversing gate FETs (ergFETs) of the various embodiments, may include an equilibrium pump electrode located within a non-conducting gap. The ergFETs of the various embodiments may provide solid state ephemeral electric potential and electric field sensor systems and methods for measuring ephemeral electric potentials and electric fields.

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Patent Owner(s)

  • THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Generazio, Edward R Yorktown, US 11 43

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