MEMORY DEVICE AND OPERATING METHOD THEREOF

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United States of America Patent

APP PUB NO 20170358357A1
SERIAL NO

15390823

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Abstract

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A memory device and an operating method thereof are provided. The memory device includes a first memory array, a first row decoder, a first column decoder, a second memory array, a second row decoder and a second column decoder. The first memory array and the second memory array are different type memories and formed in a single memory die of a wafer.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kuen-Long Taipei City, TW 138 1120
Chen, Ken-Hui Hsinchu City, TW 93 515
Hsieh, Ming-Chih Taipei City, TW 175 1012
Hung, Chun-Hsiung Hsinchu City, TW 313 3209
Lo, Su-Chueh Miaoli City, TW 50 261

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