Manufacturing method of semiconductor memory device

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United States of America Patent

PATENT NO 9935116
SERIAL NO

15672298

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Abstract

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A manufacturing method of a semiconductor memory device is provided. The semiconductor memory device can suppress current leakage generated during a programming action so that the programming action can be executed with high reliability. A flash memory of this invention has a memory array in which NAND type strings are formed. Gates of memory cells in row direction of strings are commonly connected to a word line. Gates of bit line select transistors are commonly connected to a select gate line (SGD). Gates of source line select transistors are commonly connected to a select gate line (SGS). An interval (S4) of the select gate line (SGS) and a gate of a word line (WL0) adjacent to the select gate line (SGS) is larger than an interval (S1) of the select gate line (SGD) and a gate of a word line (WL7) adjacent to the select gate line (SGD).

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Patent Owner(s)

  • WINBOND ELECTRONICS CORP.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Pin-Yao Hsinchu, TW 31 282
Yano, Masaru Tokyo, JP 95 1382

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