LASER DOPING APPARATUS AND LASER DOPING METHOD

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United States of America Patent

SERIAL NO

15679022

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Abstract

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The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

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Patent Owner(s)

Patent OwnerAddress
KYUSHU UNIVERSITYFUKUOKA-SHI FUKUOKA 812-8581

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ASANO, Tanemasa Fukuoka-shi, JP 4 13
IKEDA, Akihiro Fukuoka-shi, JP 38 206
IKENOUE, Hiroshi Fukuoka-shi, JP 21 156
OHKUBO, Tomoyuki Fukuoka-shi, JP 7 12
WAKABAYASHI, Osamu Oyama-shi, JP 394 4239

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