Method For Growing NI-Containing Thin Film With Single Atomic Layer Deposition Technology

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The present invention provides a method for growing ni-containing thin film with single atomic layer deposition technology, comprising steps of: A) placing a substrate in a reaction chamber, and under the vacuum condition, passing a gas-phase Ni source in a form of pulses into the reaction chamber for deposition to obtain a substrate deposited with the Ni source, the Ni source comprising a compound having a structure of Formula I; B) passing a gas-phase reducing agent in a form of pulses into the reaction chamber to reduce the Ni source deposited on the substrate, obtaining a substrate deposited with a Ni thin film. The application of the Ni source having a structure of Formula I in the single atomic layer deposition technology allows a Ni-containing deposition layer with good shape retention to be deposited and formed on a nano-sized semiconductor device.

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Inventor Name Address # of filed Patents Total Citations
DING, Yuqiang Wuxi, CN 4 2
DU, Liyong Wuxi, CN 1 0
XIANG, Jinjuan Beijing, CN 6 6
ZHANG, Yuxiang Wuxi, CN 12 51
ZHAO, Chao Kessel-lo, BE 100 372

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