SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

15692752

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Abstract

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A semiconductor device includes a transistor configuration including first and second gate electrodes, each of the first and second gate electrodes having at least a bottom layer and an upper layer including polycrystalline silicon grains, wherein the first gate electrode is a nMOS gate electrode formed in an nMOS region of the transistor configuration, wherein the polycrystalline silicon grains included in the bottom layer of the first gate electrode have a greater particle diameter than the polycrystalline grains included in the upper layer of the second gate electrode.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukutome, Hidenobu Kawasaki, JP 25 229
Ohta, Hiroyuki Kawasaki, JP 168 2178
Tajima, Mitsugu Kawasaki, JP 7 19

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