SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
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Aug 31, 2017
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Mar 27, 2007
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Abstract
A semiconductor device includes a transistor configuration including first and second gate electrodes, each of the first and second gate electrodes having at least a bottom layer and an upper layer including polycrystalline silicon grains, wherein the first gate electrode is a nMOS gate electrode formed in an nMOS region of the transistor configuration, wherein the polycrystalline silicon grains included in the bottom layer of the first gate electrode have a greater particle diameter than the polycrystalline grains included in the upper layer of the second gate electrode.
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