Bonding wire for semiconductor device
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United States of America Patent
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Nov 17, 2020
Grant Date -
Dec 21, 2017
app pub date -
Dec 11, 2015
filing date -
Dec 17, 2014
priority date (Note) -
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Abstract
The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.
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