PARALLEL CONFIGURED RESISTIVE MEMORY ELEMENTS
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United States of America Patent
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Dec 21, 2017
app pub date -
Jun 17, 2016
filing date -
Jun 17, 2016
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Abstract
The present invention discloses a memory cell that includes at least two non-volatile resistive memory elements coupled in parallel. The non-volatile resistive memory elements are capable of existing in different resistive states such that each of the different resistive state represents a different data state. The non-volatile resistive memory elements may include multiple layers formed within contact holes.
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