Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device

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United States of America Patent

PATENT NO 11183559
APP PUB NO 20170365660A1
SERIAL NO

15674837

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Abstract

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A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material.

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Patent Owner(s)

  • IBM CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Borg, Mattias B Rueschlikon, CH 6 20
Moselund, Kirsten E Rueschlikon, CH 5 29
Riel, Heike E Rueschlikon, CH 49 629
Schmid, Heinz Rueschlikon, CH 59 626

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