Structures and methods for long-channel devices in nanosheet technology
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 17, 2018
Issued Date -
N/A
app pub date -
Jun 16, 2016
filing date -
Jun 16, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Techniques for providing supporting structures for suspended nanosheets/wires in long-channel devices are provided. In one aspect, a method of forming a device structure includes: forming a series of alternating active and sacrificial layers as a stack on a substrate; patterning at least one feature through each of the active and sacrificial layers in the stack; filling the feature with a fill material that is resistant to etching performed on the sacrificial layers; and etching the sacrificial layers to selectively remove at least a portion of each of the sacrificial layers from the stack thereby suspending the active layers, wherein following the etching the fill material remains as a structure supporting the suspended active layers. Transistor devices and methods for formation thereof are also provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully