High-Electron-Mobility Transistor Having a Buried Field Plate

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United States of America Patent

SERIAL NO

15635695

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Abstract

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A high-electron-mobility semiconductor device includes: a buffer region having first, second and third cross-sections forming a stepped lateral profile, the first cross-section being thicker than the third cross-section and comprising a first buried field plate disposed therein, the second cross-section interposed between the first and third cross-sections and forming oblique angles with the first and third cross-sections; and a barrier region of substantially uniform thickness extending along the stepped lateral profile of the buffer region, the barrier region being separated from the first buried field plate by a portion of the buffer region. The buffer region is formed by a first semiconductor material and the barrier region is formed by a second semiconductor material. The first and second semiconductor materials have different band-gaps such that an electrically conductive channel including a two-dimensional charge carrier gas arises at an interface between the buffer and barrier regions due to piezoelectric effects.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Häberlen, Oliver Villach, AT 28 112
Ostermaier, Clemens Villach, AT 31 55
Prechtl, Gerhard Rosegg, AT 62 194

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