Silicon-containing, tunneling field-effect transistor including III-N source

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United States of America Patent

PATENT NO 10096711
APP PUB NO 20170365717A1
SERIAL NO

15694981

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Tunneling field-effect transistors including silicon, germanium or silicon germanium channels and III-N source regions are provided for low power operations. A broken-band heterojunction is formed by the source and channel regions of the transistors. Fabrication methods include selective anisotropic wet-etching of a silicon substrate followed by epitaxial deposition of III-N material and/or germanium implantation of the substrate followed by the epitaxial deposition of the III-N material.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basu, Anirban Elmsford, US 83 461
Hekmatshoartabari, Bahman White Plains, US 389 1813
Shahrjerdi, Davood White Plains, US 247 4205

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