METHOD FOR PRODUCING DOPED POLYCRYSTALLINE SEMICONDUCTOR LAYERS
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United States of America Patent
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Dec 21, 2017
app pub date -
Nov 17, 2015
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Nov 18, 2014
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Abstract
The present invention relates to a method for producing highly doped polycrystalline semiconductor layers on a semiconductor substrate, wherein a first Si precursor composition comprising at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition comprising at least one second dopant is applied to one or more other regions of the surface of the semiconductor substrate, where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; and the coated regions of the surface of the semiconductor substrate are each converted, so as to form polycrystalline silicon from the Si precursor. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.
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