Atomic layer deposition passivation for via

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United States of America Patent

PATENT NO 10232613
APP PUB NO 20170368823A1
SERIAL NO

15544048

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Abstract

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In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.

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Patent Owner(s)

  • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Zhizhang Corvallis, US 64 1090
Pugliese,, Jr Roberto A Tangent, US 3 13
Shaarawi, Mohammed Saad Corvallis, US 2 3

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