Managing threshold voltage shift in nonvolatile memory

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United States of America Patent

PATENT NO 10056139
APP PUB NO 20170372780A1
SERIAL NO

15645990

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Abstract

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Apparatus, systems, and methods to correct for threshold voltage drift in non-volatile memory devices are disclosed and described. In one example, a compensated demarcation voltage is generated by either a time-based drift compensation scheme or a disturb-based drift compensation scheme, and read and write operations to the non-volatile memory are carried out using the compensated voltage threshold.

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Patent Owner(s)

  • INTEL CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Damle, Prashant S Santa Clara, US 32 259
Qawami, Shekoufeh El Dorado Hills, US 74 905
Rivers, Doyle El Dorado Hills, US 28 176
Sundaram, Rajesh Folsom, US 143 3178
Walker, Julie M El Dorado Hills, US 13 49

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