LDMOS transistor and method

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United States of America Patent

PATENT NO 10242932
APP PUB NO 20170372985A1
SERIAL NO

15191989

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Abstract

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In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Birner, Albert Regensburg, DE 72 445
Brech, Helmut Lappersdorf, DE 45 108
Zigldrum, Matthias Regensburg, DE 17 32

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