Surface treatment for semiconductor structure

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United States of America Patent

PATENT NO 9899327
SERIAL NO

15192499

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Abstract

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A method includes forming a dielectric layer and forming a metallic conductor at least partially in the dielectric layer. Formation of the metallic conductor at least partially in the dielectric layer includes performing a planarization process. The method further includes treating respective surface areas of the dielectric layer and the metallic conductor, after the planarization process, to modify the respective surface areas of the dielectric layer and the metallic conductor. In one example, the surface treatment is a neutral atom beam treatment.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Chih-Chao Glenmont, US 1031 7515

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