FINFET AND MANUFACTURING METHOD OF THE SAME

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United States of America Patent

SERIAL NO

15299479

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Abstract

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A FinFET that includes a semiconductor substrate that has insulating areas, a fin structure, a gate dielectric layer, a gate electrode structure, a drain structure and a source structure is provided. The fin structure is disposed to extend on the semiconductor substrate between two insulating areas. The gate dielectric layer is disposed to extend across two sides of the fin structure. The gate electrode structure is disposed on the gate dielectric layer. The drain structure is disposed at a first side of the gate electrode structure and has a first resistance relative to the gate electrode. The source structure is disposed at a second side of the gate electrode structure and has a second resistance relative to the gate electrode. The first resistance is larger than the second resistance.

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Patent Owner(s)

Patent OwnerAddress
REALTEK SEMICONDUCTOR CORPORATIONNO 2 INNOVATION ROAD II HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JEAN, Yuh-Sheng Hsinchu County, TW 57 148
LUO, Cheng-Wei Hsinchu City, TW 38 95
YEH, Ta-Hsun Hsinchu City, TW 79 354
YEN, Hsiao-Tsung Hsinchu City, TW 151 748

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