Semiconductor device including an LDMOS transistor and a RESURF structure
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United States of America Patent
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Jul 17, 2018
Grant Date -
Dec 28, 2017
app pub date -
Mar 14, 2017
filing date -
Jun 24, 2016
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Abstract
In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 Ohm·cm, a front surface and a rear surface, an LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate, and a RESURF structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the LDMOS transistor.
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