Semiconductor Device with Field Dielectric in an Edge Area

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

15681454

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Abstract

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A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gamerith, Stefan Villach, AT 23 100
Hirler, Franz Isen, DE 402 3614
Jantscher, Wolfgang Villach, AT 10 18
Syed, Waqas Mumtaz Villach, AT 4 12
Weyers, Joachim Hoehenkirchen-Siegertsbrunn, DE 43 158

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