Semiconductor device and method for manufacturing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 8, 2019
Grant Date -
Dec 28, 2017
app pub date -
Aug 5, 2015
filing date -
Jan 14, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present techniques relate to a semiconductor device having resistance which has a positive temperature coefficient and a suitable value, and to a method for manufacturing a semiconductor device having resistance which has a positive temperature coefficient and a suitable value. The semiconductor device related to the present techniques is a bipolar device in which a current flows through a pn junction. The semiconductor device includes an n-type silicon carbide drift layer, a p-type first silicon carbide layer formed on the silicon carbide drift layer, and a p-type second silicon carbide layer formed on the first silicon carbide layer. Then, the second silicon carbide layer has a positive temperature coefficient of resistance.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully