Semiconductor devices and methods for forming a semiconductor device
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United States of America Patent
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Apr 10, 2018
Issued Date -
N/A
app pub date -
Jun 20, 2017
filing date -
Jun 28, 2016
priority date (Note) -
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Abstract
A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. The common doping region extends from a backside surface of the substrate to at least a part of the front side surface in contact with the wiring structure. An edge termination doping region laterally surrounds the first and second active areas. The edge termination doping region and the first doping region have a first conductivity type, and the common doping region has a second conductivity type. A resistive connection between the edge termination doping region and the first doping region is present at least during reverse operating conditions of the semiconductor device.
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