Fabrication of a vertical fin field effect transistor with an asymmetric gate structure

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United States of America Patent

PATENT NO 10217863
APP PUB NO 20170373188A1
SERIAL NO

15195498

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Abstract

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A method of forming a vertical fin field effect transistor (vertical finFET) with two concentric gate structures, including forming one or more tubular vertical fins on a substrate, forming a first gate structure around an outer wall of at least one of the one or more tubular vertical fins, and forming a second gate structure within an inner wall of at least one of the one or more tubular vertical fins having the first gate structure around the outer wall.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mochizuki, Shogo Clifton Park, US 298 1878
Wang, Junli Slingerlands, US 492 2761

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