THERMOELECTRIC MATERIAL, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 29, 2014
filing date -
Dec 29, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present application discloses a thermoelectric material, which contains CsAg5Te3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit Z1 as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg5Te3 crystal material. The CsAg5Te3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully