Transistors and methods of forming transistors
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United States of America Patent
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Aug 20, 2019
Grant Date -
Dec 28, 2017
app pub date -
Aug 23, 2017
filing date -
Oct 16, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.
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