Location-specific laser annealing to improve interconnect microstructure

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United States of America Patent

PATENT NO 10366920
APP PUB NO 20180005883A1
SERIAL NO

15198450

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Abstract

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A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Briggs, Benjamin David Waterford, US 23 42
Clevenger, Lawrence A Rhinebeck, US 711 4453
Deprospo, Bartlet H Goshen, US 33 65
Rizzolo, Michael Albany, US 225 791

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