Merged gate for vertical transistors
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United States of America Patent
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Mar 5, 2019
Grant Date -
Jan 4, 2018
app pub date -
Mar 30, 2017
filing date -
Jun 30, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
Embodiments of the invention are directed to a semiconductor structure that includes a first fin structure having a first sidewall, a first gate structure adjacent a lower portion of the first sidewall, and a first spacer structure over the first gate structure and adjacent an upper portion of first the sidewall. The first spacer structure includes a first spacer structure thickness dimension that extends in a first direction away from the first sidewall. The first gate structure includes a first gate structure thickness dimension that extends in the first direction away from the first sidewall. The first gate structure dimension is about equal to the first spacer structure thickness dimension.
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