Power semiconductor device having fully depleted channel regions
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United States of America Patent
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Jun 12, 2018
Issued Date -
N/A
app pub date -
Jun 28, 2017
filing date -
Jun 30, 2016
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Abstract
A power semiconductor device is disclosed. In one example, the device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure. An active cell field is implemented in the semiconductor body. The active cell field is surrounded by an edge termination zone. A plurality of first cells and a plurality of second cells are provided in the active cell field. Each first cell includes a first mesa, the first mesa including: a first port region and a first channel region. Each second cell includes a second mesa, the second mesa including a second port region. The active cell field is surrounded by a drainage region that is arranged between the active cell field and the edge termination zone.
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