Varied silicon richness silicon nitride formation

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United States of America Patent

PATENT NO 10644126
APP PUB NO 20180006132A1
SERIAL NO

15690494

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Abstract

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A method to fabricate a non-planar memory device including forming a multi-layer silicon nitride structure substantially perpendicular to a top surface of the substrate. There may be multiple non-stoichiometric silicon nitride layers, each including a different or same silicon richness value from one another.

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Patent Owner(s)

  • MONTEREY RESEARCH, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Shenqing Sunnyvale, US 127 886
Ma, Yi Santa Clara, US 118 3476
Ogle, Robert San Jose, US 8 390

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