Nanowire FET including nanowire channel spacers
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United States of America Patent
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Mar 19, 2019
Grant Date -
Jan 4, 2018
app pub date -
Jun 30, 2016
filing date -
Jun 30, 2016
priority date (Note) -
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Abstract
A stacked nanowire field effect transistor (FET) including a plurality of vertically stacked nanowire channels. Each nanowire channel is vertically separated from one another by sacrificial segment. A gate stack is on the upper surface of the semiconductor substrate. The gate stack includes a conductive element that wraps around the nanowire channels. Source/drain regions are on the upper surface of the semiconductor substrate. The source/drain regions directly contact the ends of the nanowire channel. The stacked nanowire FET further includes nanowire channel spacers that encapsulate the ends of the nanowire channel such that the source/drain regions are separated from the gate stack.
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