Semiconductor device including a trench structure
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United States of America Patent
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Aug 18, 2020
Grant Date -
Jan 4, 2018
app pub date -
Sep 14, 2017
filing date -
Jun 4, 2009
priority date (Note) -
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Abstract
A semiconductor device having first through third layers. The first layer has a first conductivity type. The second layer has a second conductivity type different from the first conductivity type. The third layer has a first portion having the second conductivity type and a second portion having the first conductivity type. A trench structure is located in the first portion and is completely surrounded by the first portion in an area extending from a first surface of the third layer to a second surface of the third layer.
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