Radiation sensor, method of forming the sensor and device including the sensor

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United States of America Patent

PATENT NO 10020416
SERIAL NO

15610335

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Abstract

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A semiconductor device includes a semiconductor structure formed on a substrate, a gate formed on a first side of the semiconductor structure, and a charge collector layer formed on a second side of the semiconductor structure.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Miao, Xin Guilderland, US 355 2275
Xu, Wenyu Albany, US 190 937
Zhang, Chen Guilderland, US 671 2866

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