LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING LIGHT-EMITTING ELEMENT
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Feb 3, 2016
filing date -
Feb 6, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A nitride-based semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a carrier blocking layer of the second conductivity type, provided on a surface of the second semiconductor layer closer to the first semiconductor layer; and a light-emitting layer region having a light-emitting layer, provided between the first semiconductor layer and the carrier blocking layer. A predetermined specific region is provided in the carrier blocking layer and extending from an interface between the carrier blocking layer and the light-emitting layer region and wherein a maximum value of a concentration of an impurity of the second conductivity type in the predetermined specific region is higher than 5×1019 cm−3.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully