Semiconductor devices, via structures and methods for forming the same
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United States of America Patent
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Jan 1, 2019
Grant Date -
Jan 11, 2018
app pub date -
Jul 7, 2016
filing date -
Jul 7, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an opposite second surface of a substrate, a filling insulating layer within the through hole, a first conductive layer, which is within the through hole and surrounds the filling insulating layer, wherein a portion of the first conductive layer is below the filling insulating layer and at the bottom of the through hole. The via structure further includes a first insulating layer, which is on the sidewalls of the through hole and surrounds the first conductive layer.
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