TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS

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United States of America Patent

SERIAL NO

15688833

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

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Patent Owner(s)

Patent OwnerAddress
FAIRCHILD SEMICONDUCTOR CORPORATION5005 E MCDOWELL ROAD MAILDROP A700 PHOENIX AS 85008

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHALLA, Ashok Sandy, US 46 1877
KINZER, Daniel El Segundo, US 6 48
PROBST, Dean E West Jordan, US 37 1261
YEDINAK, Joseph A Mountain Top, US 63 1762

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