Electric fuse structure and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11056431
APP PUB NO 20180019206A1
SERIAL NO

15275479

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and first fuse branches and second fuse branches are formed in the substrate, in which the first fuse branches and the second fuse branches are separated by a shallow trench isolation (STI) and the second fuse branches include different sizes. Next, fuse elements are formed to connect the first fuse branches and the second fuse branches.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.; FUJIAN JINHUA INTEGRATED CIRCUIT CO., LTD.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagai, Yukihiro Saijo, JP 60 252

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Jan 6, 2025
7.5 Year Payment $3600.00 $1800.00 $900.00 Jan 6, 2029
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jan 6, 2033
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00